石英基底石墨烯

Purity Level 99.999 % SiO2 Quartz Wafer

浓度99.999% SiO2层的石英晶片

Diameter直径

Ø 1" / 2" / 3" / 4" / 6" / 8"

Thickness厚度

0.5 mm , 1 mm , 2 mm , 3 mm , 4 mm

Surface finish表面完整度

one side or two sides polished一面或双面抛光

Flat

One flat as SEMI. Std.

TTV

<= 20 um

Surface roughness表面光洁度

Ra <= 15 A

Mechanical Properties

机械性能

Density密度

2.2 g / cm³

Pressure-proof Intensity抗压强度

1100 Mpa

Anti-curving Intensity屈服强度

67 Mpa

Anti-pull Intensity抗拉强度

48 Mpa

Poisson"s ratio泊松比

0.14 ~ 0.17

Young"s modulus杨氏模量

72000 Mpa

Rigidity modulus刚性模量

31000 Mpa

Moh"s hardness莫氏硬度

5.5 ~ 6.5

Thermal Properties

热学性能

Transformation point相变点

1120 °C

Softening point软化温度

1680 °C

Annealing point退火温度

1210 °C

Specific heat ( 20 ~ 350 °C )比热容

670 J / kg °C

Thermal conductivity ( 20 °C )热传导率

1.4 W / m °C

Thermal expansion coefficient热扩展系数

5.5×10 ^-7 cm / cm °C

Thermal processing temperature热加工温度

1700 ~ 2000 °C

Short-term operating temperature短期工作温度

1300 °C

Long-term operating temperature长期工作温度

1100 °C

Electrical Properties

电学性能

Resistivity电阻率

7×10 ⁷ ohm-cm

Insulating strength绝缘强度

250 ~ 400 Kv / cm

Dielectric constant e介电常数

3.7~ 3.9

Dielectric absorption coefficient.介电吸收系数

< 4×10 ⁴

Dielectric waste coefficient.介电系数

< 1×10 ⁴

Optical Properties

光学心梗

Refractive index ( @ 589 nm )折射率

Nd =1.4584